This project belongs to basic research in the field of information functional materials. Graphene has a unique two-dimensional structure, excellent electrical properties, and has broad application prospects in the field of electronics. Preparing high-quality graphene materials is the prerequisite and foundation for electronics applications. The project systematically carries out in-depth basic research on the preparation of high-quality graphene materials by chemical vapor deposition (CVD). Through original innovation, it has achieved a series of breakthroughs such as high-quality wafer-level single crystal graphene and direct growth of graphene on insulating substrates. The results include A. K. Professor Geim and others spoke highly of and cited it, laying an important foundation for the application of graphene electronics. The main scientific discoveries include: (1) Original graphene single-point core control to achieve rapid growth of inch-level graphene single crystals. A new mechanism for the growth of graphene isothermally precipitated on a copper-nickel alloy substrate was discovered, and a 1.5-inch graphene single crystal round was successfully developed for the first time through local carbon source control. This technology is considered to be a reproduction of three-dimensional silicon single crystal technology in two-dimensional materials and is of great significance for promoting the application of graphene in the field of microelectronics. The research results were published in "Nature middot; Materials" and was selected as the ESI top 1% high cited paper. Academician Cheng Huiming of China Academy of Sciences evaluated this work as ldquo; one of the two most important achievements in the preparation of high-quality graphene in China in 2016 rdquo;. (2) It took the lead in conducting research on the direct growth of graphene on insulating hexagonal boron nitride (h-BN) surface, and made important progress in the research on gas-phase catalytic growth of graphene and h-BN preparation. For the first time in the world, high-quality graphene growth on the insulating h-BN surface has been achieved, and graphene nucleation, orientation, and related mechanisms have been revealed. New methods of gas-phase catalysis have been creatively developed to obtain extremely high quality graphene with room temperature Hall mobility exceeding 20000 cm2/Vs. For the first time, high-quality single-crystal h-BN domains have been successfully prepared by solid dissolving nickel in a copper substrate. Relevant results were published twice in Nature Middot; Newsletter. Among them, the growth of oriented graphene on h-BN was selected as ESI top 1% highly cited paper and was awarded the Nobel Prize winner A. K. Professor Geim and discoverer of carbon nanotubes S. Famous scholars such as Professor Iijima and other well-known scholars and many review papers were cited and highly praised. (3) The CVD growth of graphene on semiconductor germanium substrates was reported internationally for the first time, and it was discovered that the step-assisted graphene crystal domain orientation growth mechanism was achieved to achieve a 4-inch graphene single crystal circle. It was discovered that semiconductor germanium substrates have the ability to catalyze the growth of graphene, and they are the first in the world to prepare high-quality graphene wafers on germanium wafers. They have attracted follow-up research by well-known research institutions such as Samsung in South Korea, and have been repeatedly named and cited by well-known review journals such as Chemical Society Reviews. At the same time, it was revealed that the lattice matching effect at the Ge(110) surface steps induced the oriented growth mechanism of graphene crystal domains; a 4-inch graphene single crystal circle was successfully developed through seamless merger of the oriented crystal domains. The prepared graphene single crystal has been successfully applied to multiple electronics application scenarios, obtaining radio frequency transistors with a cut-off frequency of up to 200 GHz. Eight representative papers were cited by him 720 times in total, of which he cited 677 times in SCI. He has been invited to give invited reports at important international academic conferences more than 20 times, and has been authorized 17 patents (10 domestically and 7 abroad). During the project implementation period, the project completers have successively received funding and awards from major national science and technology projects, National Natural Science Foundation of China Outstanding Youth Fund, Shanghai City ldquo; Leading Talents rdquo;, Shanghai City ldquo; Ten Thousand Talents Plan rdquo; Young Talents, National Ten Million Talents Project, Shanghai City ldquo; Young Science and Technology Star (Category A) rdquo; Shanghai City ldquo; Young Talents rdquo; and the Special Award of the President of the Chinese Academy of Sciences.