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Research on Copper and Copper Barrier Layer Polishing Solution, Key Polishing Materials for Integrated Circuits at 65nm and Below
Copper polishing solution below 65nm has high flatness and low defects, filling the domestic gap.
Type
Special chemical materials
Tags
Other resource gains
Speech processing
Information processing technology
Chemical mechanical polishing
Copper polishing solution
Copper barrier polishing solution
Integrated circuit
Solution maturity
Mass promotion / Mass production
Applicable industry
Scientific research and technology services
Applications
Semiconductor manufacturing
Key innovations
This product innovatively uses modified azoles, bifunctional inhibitors and complex corrosion inhibitors to realize the design and online control of polishing performance at the molecular level, and solves the problems of integrated circuits below 65nm such as low voltage, high efficiency, low defects, self-stopping, and wide process window. Copper polishing problem.
Potential economic benefits
This product is expected to significantly reduce domestic integrated circuit manufacturing costs, enhance corporate competitiveness, achieve import substitution, ensure the safety of the industrial chain, and create huge economic value.
Potential climate benefits
By improving polishing efficiency and reducing defect rate, the polishing solution can significantly reduce energy consumption and material waste in the integrated circuit manufacturing process, thereby reducing carbon emissions.
Solution supplier
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Anji Microelectronics (Shanghai)
Anji Microelectronics (Shanghai)
Anji Microelectronics is China's leading supplier of semiconductor materials, providing key CMP polishing fluids and functional wet chemicals for chip manufacturing.
Shanghai,China
Solution details

The "Research and Industrialization of Copper and Copper Barrier Polishing Solutions, Key Polishing Materials for Integrated Circuits 65nm and Below" completed by the company is a project in the field of new materials and belongs to disciplines such as special auxiliary materials for electronic processing and special functional materials. The products we develop copper polishing fluids (C4, U3000, etc.) and copper barrier polishing fluids (H4, H6P, etc.) are mainly used in the CMP copper and copper barrier polishing process of integrated circuit manufacturing. At present, the products have entered the domestic and foreign Many 45nm technical node production lines are used. It is the only copper and copper barrier polishing fluid product in China that has entered the 12-inch production line. Chemical mechanical polishing (CMP) technology is currently the only global planarization technology used in the integrated circuit (IC) industry, accounting for the second largest overall cost of the integrated circuit production process. my country has become an important integrated circuit production base in the world. Independent research and development of various high-end integrated circuit polishing materials is of great significance to improving my country's local semiconductor industry chain, reducing the cost of local integrated circuit manufacturing enterprises, and improving national industrial security. CMP polishing liquids are generally composed of abrasives and various carrier additives. Carrier additives generally have the functions of promoting polishing, adjusting selectivity, inhibiting corrosion, and controlling surface morphology. In the research of copper and copper barrier layer polishing liquids, our innovative points are: 1. Using hydrophilic groups Modified azole nitrogen heterocyclic compounds (such as carboxyl, sulfonic acid or hydroxyl groups) can be used as inhibitors of the polishing solution, which can change the structure of the passivation film formed on the copper surface, thereby improving the inhibitor film. Hardness, realizing the design of copper chemical mechanical polishing performance at the molecular level; 2. An inhibitor with bifunctional groups X-R-Y is used. One functional group on the bifunctional group reagent interacts with the polished substrate to form a protective film on the surface of the substrate, and the other functional group interacts with the abrasive particles and assists the abrasive particles in removing the film, achieving a better polishing effect under pressure; 3. Use traditional inhibitors and corrosion inhibitors The synergistic effect of (acrylic acid and its copolymer corrosion inhibitors, organic phosphine corrosion inhibitors, etc.) is used to adjust the surface morphology and surface defects, achieving complete protection of metals and dielectric materials, and adjusting the sensitivity of metal removal to oxidant concentration according to different compound film formers to achieve online regulation; 4. Use inhibitors with functional groups with special functions (such as carboxyl, amino, amido or fatty chains) grafted on the molecular skeleton to eliminate metal corrosion and dielectric material erosion. The polishing solution we developed has high planarization efficiency, high polishing rate, low defects at low pressure, can control local or overall corrosion, and solves the problem of high static corrosion rate of copper at room temperature and polishing temperature. It has self-stopping function during overpolishing: the disk recess grows slowly with overpolishing time, the overpolishing window is wide, and the cost is low. The product can cover all domestic copper processes, better meeting the different process requirements among different chip manufacturers. During the implementation of the project, nearly 40 invention patents were applied for, of which 11 were authorized. The products it develops have filled the gap in this field in China. The products have passed the test and demonstration of many domestic integrated circuit companies such as SMIC and Wuhan Xinxin, and have entered their production lines. Since 2009, the cumulative sales have been achieved. 120 million yuan. It reduces the production costs of domestic integrated circuit manufacturing companies and improves their market competitiveness.

Last updated
20:42:41, Nov 05, 2025
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