

Introduction to the results:
By adopting the method of the invention, the high-concentration diffusion layer on the surface of the gallium antimonide wafer after diffusion can be effectively suppressed, and the problem that precise corrosion is difficult to control after the traditional diffusion process can be solved; by adopting the method of the invention, no protective gas needs to be introduced in the process of preparing the PN junction, which reduces the cost of the gallium antimonide battery;
Technical advantages;
In the selective emitter gallium antimonide infrared battery prepared by the method of the invention, the single diffusion front zinc curve inside the selective emitter is directly formed through diffusion, and no corrosion process is needed, so the electrical output performance is stable, and the selective emitter gallium antimonide infrared battery can be used as an electrical energy conversion element in an infrared photoelectric conversion system.
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