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Selective emitter gallium antimonide infrared battery and preparation method thereof
Low-cost, high-performance gallium antimonide infrared battery is used in infrared photoelectric conversion systems.
Type
Process
Tags
Electrochemical energy storage
Energy
Battery preparation
Solution maturity
Early adoption / Process verification
Cooperation methods
Overall transfer
Technology licensing
Applicable industry
Scientific research and technology services
Applications
Energy
Key innovations
The technology solves the traditional precision corrosion problem, reduces the cost and improves the performance stability of infrared batteries by effectively restraining gallium antimonide diffusion layers, avoiding protective gases and directly forming PN junctions.
Potential economic benefits
This technology significantly reduces the manufacturing costs of gallium antimonide batteries by eliminating protective gases and corrosion steps. At the same time, stable electrical properties improve product reliability and service life, enhance market competitiveness, and bring considerable economic benefits.
Potential climate benefits
No protective gases and corrosion processes are needed, directly reducing production energy consumption and chemical carbon emissions. It is stable and low-cost, is conducive to infrared photoelectric conversion applications, and indirectly helps save energy and reduce carbon emissions.
Solution supplier
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University of Science and Technology of China
University of Science and Technology of China
China University of Science and Technology is China's top science and engineering research university, committed to cultivating high-level scientific and technological talents and serving the country's strategic needs.
Solution details

Introduction to the results:

By adopting the method of the invention, the high-concentration diffusion layer on the surface of the gallium antimonide wafer after diffusion can be effectively suppressed, and the problem that precise corrosion is difficult to control after the traditional diffusion process can be solved; by adopting the method of the invention, no protective gas needs to be introduced in the process of preparing the PN junction, which reduces the cost of the gallium antimonide battery;


Technical advantages;

In the selective emitter gallium antimonide infrared battery prepared by the method of the invention, the single diffusion front zinc curve inside the selective emitter is directly formed through diffusion, and no corrosion process is needed, so the electrical output performance is stable, and the selective emitter gallium antimonide infrared battery can be used as an electrical energy conversion element in an infrared photoelectric conversion system.


Last updated
11:39:38, Nov 04, 2025
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