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High thermal conductivity silicon nitride ceramic substrate
The third-generation semiconductor substrate supports green technologies such as electric vehicles and smart grids.
Type
Material
Tags
Resource utilization
Electric vehicle
Chemical engineering
Excellent dielectric properties
Thermal conductivity
Mechanical properties
The third generation semiconductor
Solution maturity
Early adoption / Process verification
Cooperation methods
Face-to-face consultation
Applicable industry
Scientific research and technology services
Applications
Advanced electronic
Key innovations
The innovation of this third-generation semiconductor key substrate material lies in its excellent thermal conductivity, mechanical and dielectric properties, providing core support for green technologies and high-end manufacturing such as electric vehicles and smart grids.
Potential economic benefits
As a high-performance key material, it can significantly improve the efficiency and life of end products, reduce energy consumption and maintenance costs, and bring huge economic benefits with its broad market prospects.
Potential climate benefits
This substrate material significantly reduces energy losses by improving the power-electronic conversion efficiency of electric vehicles, rail transit, new energy equipment and smart grids. High thermal conductivity enables device miniaturization and higher power density, improves the utilization of clean energy such as wind power generation, and indirectly reduces energy consumption for manufacturing and communication base stations.
Solution supplier
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Shanghai Institute of Silicate, Chinese Academy of Sciences
Shanghai Institute of Silicate, Chinese Academy of Sciences
The Shanghai Institute of Silicate, Chinese Academy of Sciences, focuses on the research of advanced inorganic materials and supports high-tech industries and major national needs.
Shanghai,China
Solution details

Application areas:

Electric vehicles, rail transit, smart grid, wind power generation, aerospace, industrial robots, CNC machine tools, new energy equipment, uninterruptible power supplies (UPS), etc. It is also used in radio frequency devices, HTCC, communication base stations, etc. Third generation key substrate materials for semiconductors

Technical characteristics:

The material has excellent mechanical properties, thermal conductivity and dielectric properties

Performance indicators:

① Thermal conductivity: ≥ 90W/m×K;

② Flexural strength: ≥700MPa;

③ Fracture toughness: ≥8MPa× m1/2;

④ Room temperature resistivity: ≥1013-1014Ω×cm;

③ Sample size: 90mm ´ 90mm;

Current status:

Pilot stage

Last updated
07:06:32, Nov 05, 2025
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