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Key technologies of high-efficiency and energy-saving SiC power devices and modules
New energy vehicle SiC power module, 99% efficiency, high temperature and high pressure resistance, energy conservation and emission reduction.
Type
Power device
Tags
Energy saving electronic products
High-efficiency energy-saving
Sic chip
Electronic components and device technology
Solution maturity
Mass promotion / Mass production
Cooperation methods
Other
Applicable industry
Transportation, warehousing and postal services
Applications
Transportation
Key innovations
The SiC chip and power module achieve high voltage, low on-resistance, and high junction temperature through optimized structural epitaxy, advanced packaging, and double-sided heat dissipation technologies. The motor controller efficiency reaches 99%, promoting the development of new energy.
Potential economic benefits
SiC technology enables new energy vehicles to have energy efficiency up to 99%, significantly reducing operating energy consumption and maintenance costs. High reliability extends equipment life and promotes the development of the renewable energy industry, which has long-term economic value.
Potential climate benefits
SiC chips improve the energy efficiency of new energy vehicles and reduce power consumption and greenhouse gas emissions; their high efficiency also supports the development of renewable energy and further reduces carbon emissions.
Solution supplier
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The 55th Institute of Electric Power Science of China
The 55th Institute of Electric Power Science of China
China Power Science Institute 55: China's leader in power and microwave semiconductor devices, supporting the development of national defense and high-tech industries.
China
Solution details

1. scope of application

 New energy vehicles.

2. Core technologies and processes

 Using wafers as materials, SiC chips are prepared through processes such as structural epitaxial growth, dry etching, carbon film making, and high-temperature oxidation. By optimizing the chip structure and enhancing the current density, a highly reliable gate dielectric is formed; ultrasonic metal welding process and thick copper wire bonding process are used to improve the fatigue resistance life and connection reliability of terminal solder joints; through terminal bonding, double-sided heat dissipation, Nano-silver sintering and other interconnection technologies realize SiC integrated water-cooled packaging.

3. main technical parameters

 SiC MOSFET chip: breakdown voltage ≥1200V, on-resistance ≤25mΩ, and maximum working junction temperature ≥200℃. SiC power module: breakdown voltage ≥1200V, on-current ≥400A, and maximum working junction temperature ≥200℃.

4. comprehensive benefits

 The efficiency of the motor controller system of new energy vehicles is 99%. Promote the development of renewable energy such as solar energy and wind energy, and reduce greenhouse gas and harmful gas emissions.

Last updated
11:07:41, Nov 05, 2025
Information contributed by
Green Technology Bank

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