Compared with silicon-based power semiconductors, power semiconductors based on silicon carbide greatly reduce losses and device area, and play an important role in the fields of power, railways, hybrid vehicle (HV) and electric vehicle (EV) industries. The development of silicon carbide backing materials is the key to the development of silicon carbide power semiconductors. Our research team has been cooperating with Jiuding Construction Group Co., Ltd. since 2009, and has successfully developed 2-3 inch 4H-SiC and 6H-SiC wafers. All technical indicators have reached commercial standards. At the same time, we have invented The dual seed crystal physical vapor phase transport technology increases the number of crystals grown in each furnace and reduces the unit price of silicon carbide wafers.