This project belongs to the field of basic research in materials science. With the popularization of new information technologies such as mobile smart terminals, the Internet of Things, and cloud computing, people's demand for storage of massive information obtained from multiple channels and multiple perspectives continues to increase. The development of data storage technologies with ultra-high density, ultra-large capacity, long life, and low power consumption and ease of operation and relying on new materials and new storage mechanisms has become the key to the development of the information industry and rapid innovation in the digital world. Non-volatile memory devices are an important part of integrated circuits, while my country's non-volatile memory industry (especially high-end memory) with independent intellectual property rights is almost zero. In April 2018, the U.S. Department of Commerce issued a ban on ZTE's chip export, which fully reflected the huge gap between my country and the United States in the core technology field of chips. The United States 'move to ban ZTE has revealed the pain of China's lack of chips. The problems faced by the chip industry such as high dependence on high-end products, talent shortage and low industrial concentration have been fully exposed. It is urgent to vigorously develop China chips.  Organic polymer materials have the advantages of high structural regulation, low cost, easy processing, three-dimensional stackability, and good mechanical flexibility. In recent years, information storage technology based on organic/polymer materials has become popular and is expected to provide a new technical idea for the development of ultra-large-scale integrated circuits and solving the Von Neumann bottleneck and Moore's Law limit problems faced in the development of information technology. Supported by funds such as the National Fund Committee's Key Fund, the National Fund for Distinguished Young Persons and the Shanghai City Leading Talent Program, our team has innovatively designed and prepared a series of new nonvolatile polymer information storage materials and devices, achieving low starting voltage, high switching ratio, and low power consumption. Some key performance indicators such as low power consumption provide theoretical basis and material basis for the development of high-performance information memories: (1) Using ion transport and compensating doping methods to increase the concentration of mobile carriers and adjust the mobility of carriers, achieving precise and continuous control of the resistance state of the material; using polymer memristors to successfully realize neural synapse function simulation; (2) For the first time in the world, a new idea of using polymer covalent modification of graphene to prepare rewritable memory materials was proposed; The world's first graphene-based conjugated polymer memory device was prepared, taking the lead in realizing solution processing of polymer-graphene nanocomposite information storage materials; (3) A new technology to stabilize the resistance transition is proposed to control the migration or adsorption/desorption of dopants through an electric field, and stable multi-state storage is achieved through the electric field to adjust the migration and doping degree of protonic acid, breaking through the limitations of the original material system;(4) A&& new idea to prepare memory devices and effectively improve device stability is proposed. The stability of nano-aggregated devices is significantly better than that of non-aggregated devices; (5) The charge trapping and molecular conformation change effects of azo groups are introduced into the polyvinyl carbazole side chain to build a new structural unit with donor-potential well-acceptor, and better device read-write performance and stability are obtained. A new method to stabilize intramolecular charge transfer effects by using the molecular isomerism characteristics of azo groups is proposed.  The project team has been engaged in research on organic/polymer information storage materials since the end of 2008 and has achieved a series of original results. As of the end of 2016, it has been in Chem. Soc. Rev.(IF: 40.18)、Adv. Mater. ( IF21.95)、J. Am. Chem. Soc. (IF14.36)、Adv. Funct. Mater. (IF13.32)、Mater. Horizons (IF13.18)、Chem. Mater. (IF9.89) and other internationally renowned SCI journals published 38 papers on information storage, including 26 papers with impact factors greater than 5, and were cited 1738 times by others. The eight representative papers selected were cited 1145 times and 868 times by others. On average, each was cited 108.5 times by others. The maximum number of other citations for a single research paper was 320 times. Among the main completers of the project, 1 was selected into the National Outstanding Young Persons Fund (2015), 2 were selected into the National Outstanding Young Persons (2017), 1 was nominated by the National Excellent Expo Thesis (2013), 2 were selected as Shanghai City Doctoral Thesis Winners (2012, 2014), 1 was selected as Shanghai City Pujiang Scholar and Chenguang Scholar (2015).