*Technology/project introduction (background, status, characteristics, etc.): Beryllia oxide ceramics have a high melting point and thermal shock resistance. Its thermal conductivity is similar to copper and silver, and has excellent electrical insulation characteristics. At room temperature, the thermal conductivity is about 20 times that of alumina ceramics. The heating in electronic products and devices is the critical point of device life and quality. Beryllia oxide ceramics, due to its ideal thermal conductivity, can be used to improve device life and quality, which is conducive to device development towards miniaturization. Improve device power, so it can be widely used in aerospace, nuclear power, metallurgical engineering, electronics industry, rocket manufacturing, etc.  

*Main technical indicators: Regarding the toxicity of beryllium oxide, it means that soluble beryllium oxide is toxic. For us, beryllium oxide ceramics are sintered at 1,650 - 1,700 ° C to make a porcelain material that is insoluble in acids and bases. Therefore, the use of beryllium oxide ceramics (as long as it is properly protected) is not toxic.     Beryllia oxide ceramic performance project test conditions Measuring units and symbol indicators Volume density g/cm3 ≥2.85 Beryllia oxide content % ≥99 Airtightness through liquid permeability through flexural strength MPa ≥140 Thermal shock resistance through linear expansion coefficient 20℃-500℃ ×10 - 4/℃ 7-8.5 Thermal conductivity 4 0 ℃ W/m·k ≥250 electrical constant 1MHz 20 ℃ 6.5 - 7.5 10GHz 20 ℃ 6.5-7.5 Dielectric loss tangent 1MHz 20℃ × 10-4 ≤4 10GHz 20 ℃ ×10 -4 ≤8 Volume resistivity 100℃ ΩNaN ≥ @0 13 300℃ Ω NaN ≥10 10 Body strength DC KV/mm ≥15 Chemical stability 1:9HCl ug/cm2 ≤0.3 10% NaOH ug/cm2 ≤0.2  Product Quality Certificate Item Test Conditions Measurement Units and symbols Indicator Beryllia oxide (Be0) ≥99.0 Bulk density Volurne density g/3 ≥2.85 Airtightness Through liquid permeability Through flexural strength Mpa ≥170 Coeffici of expansion 25℃-500℃ X106 /℃ 7-8.5 

Thermal conductivity 25℃ W/m.k ≥250 100℃ W/m.k ≥190 

Dielectric constant Permittivity 1MHz.20℃ 6.5-7.5 10GHz.20℃ 6.5-7.5 

Dielectric loss angle tangent Loss tangrnt 1MHz.20℃ X10-4 ≤4 10GHz.20℃ X10 -4 ≤8 Volume point resistivity Voiume resistance 25℃ ΩNaN ≥1014 300℃ ΩNaN ≥1011 Breakdown strength KV/mm (D, C) ≥25 

Chemical stability Chemical durability 1:9HCL Mg/cm3 ≤0.3 10% NaoH Mg/cm3 ≤0.2 

*Current application situation: In electronic products, the heat generation of devices is the critical point of device life and quality. However, beryllium oxide ceramics, due to its ideal thermal conductivity, can be used to improve device life and quality, which is conducive to the development of devices towards miniaturization. Improve device power, so it can be widely used in aerospace, nuclear power, metallurgical engineering, electronics industry, rocket manufacturing, etc.  

*Application prospects of "civilian joining the army" or "military conversion": Improve device power, so it can be widely used in aerospace, nuclear power, metallurgical engineering, electronics industry, rocket manufacturing, etc.