In response to the development needs of high-power laser technology, driven by the demand for large-scale national laser devices, the full-process process control of high-damage-threshold laser thin films and quantitative technologies and devices for various process processes have been invented, realizing a series of high-damage-threshold laser thin film devices. The production and application of value laser thin film devices have improved the performance of my country's high-damage-threshold laser thin film devices, and at the same time, the "key technologies of high-damage-threshold laser thin film devices" have been successfully transferred to enterprises. We have jointly built a pilot production line for high damage threshold laser thin film components with the company, which will provide high-quality laser thin film optical components for major national needs and domestic and foreign laser markets.

Key technologies:

1. A new method for studying the damage mechanism of substrate-thin film systems with artificial defects is proposed, the physical mechanism and quantitative laws of defect damage are clarified, and a new quantitative approach for the entire process of laser thin film device manufacturing is invented;

2. A high-precision detection technology for micro and nano-scale defects on the sub-surface of the substrate and a multi-iterative etching removal technology and device were invented. The sub-surface notch layer of the optical substrate produced was 90nm;

3. A quantitative monitoring method for substrate surface defects and a multi-frequency composite ultrasonic quantitative cleaning technology and special equipment were invented. After cleaning, the density of defects above 300 nm on the surface of the substrate (50nm) was 0.6/mm.²;

4. The film system design method, thin film preparation technology and components, and laser pretreatment technology were invented to suppress the electric-field enhancement effect of defects, which increased the damage threshold of the device by more than 10 times.